| PART |
Description |
Maker |
| PBL40310 |
3.5 V GSM 900 MHz Power Amplifier
|
ERICSSON[Ericsson]
|
| MRFIC0913 |
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| 2SK3078 |
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
Toshiba Semiconductor
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| PC24090100A |
850/900/1800/1900MHZ GSM PCB ANTENNA
|
List of Unclassifed Manufacturers
|
| Q2406A Q2406B Q2426E Q2406 Q2406D Q2406E Q2426 Q24 |
SELF CONTAINED E GSM/GPRS 900/1800 OR 850/1900 BI BAND MODULE
|
ETC[ETC]
|
| TQM6M5001 |
3V Quad-Band GSM/EDGE 850/900 DCS/PCS Transmit Module
|
TriQuint Semiconductor
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLM6G10-30 BLM6G10-30G |
W-CDMA 900 MHz - 1000 MHz power MMIC
|
NXP Semiconductors
|
| RF6100-2 |
RF Micro Devices 3V 900 MHz Linear Amplifier 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| MAAV-007087-000100 MAAV-007087-0001TB MAAV-007087- |
900 MHz - 2500 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX
Voltage Variable Attenuator 900 - 2500 MHz
|
Tyco Electronics
|
